Other articles related with "single event effects":
108501 Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥)
  Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
    Chin. Phys. B   2018 Vol.27 (10): 108501-108501 [Abstract] (584) [HTML 1 KB] [PDF 1529 KB] (180)
66105 Zhi-Feng Lei(雷志锋), Zhan-Gang Zhang(张战刚), Yun-Fei En(恩云飞), Yun Huang(黄云)
  Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
    Chin. Phys. B   2018 Vol.27 (6): 66105-066105 [Abstract] (683) [HTML 1 KB] [PDF 1455 KB] (191)
88502 Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥)
  Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
    Chin. Phys. B   2017 Vol.26 (8): 88502-088502 [Abstract] (660) [HTML 1 KB] [PDF 714 KB] (209)
96103 Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Zhao Fa-Zhan (赵发展), Liu Gang (刘刚), Han Zheng-Sheng (韩郑生), Geng Chao (耿超), Liu Jian-De (刘建德), Xi Kai (习凯), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹), Luo Jie (罗捷), Gu Song (古松), Liu Tian-Qi (刘天奇)
  Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers
    Chin. Phys. B   2013 Vol.22 (9): 96103-096103 [Abstract] (688) [HTML 1 KB] [PDF 898 KB] (872)
86102 Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Su Hong (苏弘), Duan Jing-Lai (段敬来), Mo Dan (莫丹), Yao Hui-Jun (姚会军), Luo Jie (罗捷), Gu Song (古松), Geng Chao (耿超), Xi Kai (习凯)
  Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation
    Chin. Phys. B   2013 Vol.22 (8): 86102-086102 [Abstract] (633) [HTML 1 KB] [PDF 363 KB] (616)
36103 Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟)
  Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films
    Chin. Phys. B   2013 Vol.22 (3): 36103-036103 [Abstract] (794) [HTML 0 KB] [PDF 523 KB] (634)
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